The Effects of Growth Time on Surface Morphology and Optical Band Gap Energy ZnO Thin Films

All thin ZnO films are synthesized by nebulizer on silicon substrates with growth periods of 10, 20, and 30 minutes. The characterizations performed ultraviolet-visible (UV-Vis) spectrophotometer, scanning probe microscopy, X-ray diffraction (XRD), the various durations minutes have been observed. results show that all samples polycrystalline hexagonal wurtzite varying root mean square (RMS) roughness levels average island height 86.931 nm, 70.046 99.623 nm for deposition time minutes, respectively. optical band gap energy predicted extrapolating linear plot Tauc equation. It confirms 3.25, 3.24, 3.23 eV increasing times.